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On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

THE F_T CHARACTERISTICS OF EPITAXIAL NPN TRANSISTORS IN UPWARD OPERATIONKWAN KW; BRUNNSCHWEILER A; ROULSTON DJ et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 305-312; BIBL. 12 REF.Article

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

CHARACTERISTICS OF MODULATION-DOPED AL_XGA_1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

RESPONSE TIMES FOR A STORAGE ELECTROOPTIC EFFECT IN LIQUID CRYSTALSFRUNZA S; BEICA T; MOLDOVAN R et al.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 44; NO 5; PP. 330-332; BIBL. 5 REF.Article

Low-noise quasioptical 2,0-mm and 1,5-mm Schottky mixer receiversERU, I. I.International journal of infrared and millimeter waves. 1994, Vol 15, Num 7, pp 1315-1323, issn 0195-9271Article

The switching characteristics of Shottky-barrier diodes under high-level injection with a non-zero field at the depletion layer edgeEL-BANNA, M.International journal of electronics. 1998, Vol 84, Num 5, pp 445-452, issn 0020-7217Article

Hydrogen sensitivity of Pt-Pd/p-CaFe₂O₄ diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diodeSAHA, A. R; DIMITRIU, C. B; HORSFALL, A. B et al.Applied surface science. 2006, Vol 252, Num 11, pp 3933-3937, issn 0169-4332, 5 p.Conference Paper

Simulation and analysis of the I-V characteristics of a Schottky diode containing barrier inhomogeneitiesCHAND, S; KUMAR, J.Semiconductor science and technology. 1997, Vol 12, Num 7, pp 899-906, issn 0268-1242Article

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal ProcessingODER, T. N; SUNG, T. L; BARLOW, M et al.Journal of electronic materials. 2009, Vol 38, Num 6, pp 772-777, issn 0361-5235, 6 p.Article

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodesDOGAN, H; KORKUT, H; YILDIRIM, N et al.Applied surface science. 2007, Vol 253, Num 18, pp 7467-7470, issn 0169-4332, 4 p.Article

Electrical and photovoltaic properties of Ag/p-AgGaSe₂ polycrystalline thin film Schottky barrier diodesSATYANARAYANA MURTHY, Y; MAHAMMAD HUSSAIN, O; UTHANNA, S et al.Physics letters. A. 1991, Vol 152, Num 5-6, pp 311-314, issn 0375-9601Article

The Bethe condition for thermionic emission near an absorbing boundaryBERZ, F.Solid-state electronics. 1985, Vol 28, Num 10, pp 1007-1013, issn 0038-1101Article

Optimal barrier height for Schottky diode rectifiersASHOK, S.International journal of electronics. 1984, Vol 57, Num 3, pp 429-431, issn 0020-7217Article

An analytic model for barrier height enhancement of the Schottky barrier diode using low-energy ion implantationCHING-YUAN WU.Journal of applied physics. 1983, Vol 54, Num 2, pp 971-976, issn 0021-8979Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

Schottky barrier diode on a submicron-thick silicon membrane using a dual surface fabrication techniqueLEE, K; SILCOX, J; LEE, C. A et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 4038-4040, issn 0021-8979Article

Controlled low barrier height n⁺-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodesKLEINSASSER, A. W; WOODALL, J. M; PETTIT, G. D et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1168-1170, issn 0003-6951Article

A study of surface passivation on GaAs and In_0.53Ga_0.47 Schottky-barrier photodiodes using SiO₂, Si₃N₄ and polyimideLEE, D. H; LI, S. S; LEE, S et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1695-1696, issn 0018-9383Article